OEM Group, a semiconductor capital equipment manufacturer based in Phoenix, Arizona USA, reported that the company has received first-in-fab and repeat tool orders for its Cintillio™ wet chemical processing system. OEM Group says that the orders come from several leading Ultra Bright LED manufacturers working in the automotive lighting market. …
LED Materials (GaN, GaAs, etc.) and Equipment
CEA-Leti Demonstrates New Fabrication Process for Producing High-brightness Micro-LED Arrays for Head-mounted and Head-up Displays
CEA-Leti of Grenoble, France, has demonstrated a process for fabricating high-density micro-LED arrays. CEA-Leti developed the high-density micro-LED array process in collaboration with III-V Lab. CEA-Leti says that these high-density micro-LED arrays can be used in next generation of wearable and nomadic systems. CEA-Leti, which is one of the three …
Unversity of Cambridge to Get Veeco’s Propel™ Power GaN MOCVD System for GaN-on-silicon Research
The University of Cambridge has ordered Veeco’s Propel™ Power Gallium Nitride (GaN) metal organic chemical vapor deposition (MOCVD) System for GaN-on-silicon power electronics and LED research and development, according to a Veeco press release. The system will be installed at the Cambridge Centre for Gallium Nitride headed by Professor Sir …
Kaistar Purchases Veeco EPIK700 Systems for LED Production
Veeco Instruments reports that KaiStar Lighting Co., Ltd., of Xiamen, China, has ordered several Veeco TurboDisc® EPIK700™ Gallium Nitride (GaN) Metal Organic Chemical Vapor Deposition (MOCVD) systems. KaiStar, a joint venture between Shenzhen Kaifa Technology Co., Ltd. and Epistar Corporation, plans to use the EPIK700 systems to increase LED production …
Agressive Expansion Plans of Chinese Companies to Drive Surge in MOCVD System Purchases, According to IHS
IHS forecasts that a total of about 220 GaN MOCVD reactors will be installed in 2015. According to the latest data in the IHS LED Intelligence Service, the aggressive expansion plans of some Chinese LED companies will drive this surge in MOCVD system orders. The company points out that this new …
on April 1, 2015 in LED/SSL Financial News, LED Materials (GaN, GaAs, etc.) and Equipment, Latest News, LED Business News
Nanoco and Marl to Partner on Developing LED Lighting with Cadmium-Free Quantum Dots
Nanoco Group plc of Concord, Massachusetts and Marl International of Ulverston, England have partnered to develop lighting products with cadmium-free quantum dots. The new products will feature Nanoco’s cadmium-free quantum dot technology. Quantum dots are minuscule particles of semiconductor materials. The bandgap of light emitted from quantum dots is inversely …
on March 27, 2015 in LED Chips, Phosphors, Optics, Drivers, LED Materials (GaN, GaAs, etc.) and Equipment, Latest News
Enhancement Mode and Cascode Configuration GaN-on-Silicon Platforms
Infineon Technologies AG of Munich, Germany, has expanded its Gallium Nitride (GaN)-on-Silicon technology and product portfolio. The company now offers both cascade and enhancement mode configuration of GaN-based platforms. Infineon has optimized the GaN-on-Si for applications requiring superior energy efficiency and higher power density including Switch Mode Power Supplies (SMPS) …
Osram Opto and Institute for Semiconductor Technology at Braunschweig University of Technology Open Epitaxy Competency Center for GaN R&D
Osram Opto Semiconductors GmbH and Institute for Semiconductor Technology at Braunschweig University of Technology have opened the Epitaxy Competency Center (Ec2) after many cooperative projects including the European Union’s project GECCO. In that project the joint team created a so-called “3D nano-LED” for white light. The ec² will serve as …
Group Demonstrates In-situ Photoluminescence Measurement System Within MOCVD Reactor
Laytec collaborated with Professor Dirk Rueter´s group at University of Applied Sciences Ruhr West to demonstrate the first quasi-continuous real-time photoluminescence study of growing InGaN LED structures inside an MOVPE production reactor. Room temperature wafer-based photoluminescence (PL) measurements are known to offer excellent predictors of the emission wavelength and intensity …
Epistar Licenses ALLOS’ GaN-on-Si Epiwafer Technology
Epistar Corporation of Hsinchu, Taiwan reported that it has licensed the gallium nitride on silicon (GaN-on-Si) technology from the engineering and consulting company ALLOS Semiconductors, of Germany. Late last year ALLOS acquired the technology, know-how and intellectual property of former AZZURRO Semiconductors which included GaN-on-Si templates. According to Epistar, the …
