Osram Opto Semiconductors has announced the launch of the FLINGO project to develop new materials particularly layers and processes to improve the durability and efficiency of LEDs. The company will serve as project coordinator working with four partners from research and industry. Osram Opto Semiconductors says that it is collaborating …
LED Materials (GaN, GaAs, etc.) and Equipment
Development Points to Potential for 100-Fold Improvement in Nanopillar LED Efficiency
Researchers from Eindhoven University of Technology have created a very efficient nanopillar LED. The team fabricated the nanopillar LED with a metal cavity in a III-V layer stack attached to a silicon substrate. The device achieved “relatively high” on-chip external quantum efficiency (10−4 to 10−2 for room-temperature and 9.5 K, …
Aixtron Acquisition Clearance Withdrawn by German Government
Aixtron SE, which is located in Herzogenrath, near Aachen, Germany, reported that the German Federal Ministry of Economics and Energy withdrew its Clearance Certificate issued on September 8, 2016, that would have allowed Fujian Grand Chip Investment GmbH to take over Aixtron SE. The German Federal Ministry of Economics and …
Strange Luminescence Suspends Kasha’s Rule
Researchers at Vermont University and Dartmouth College have found a luminescent liquid that does not seem to obey a long standing law of chemistry called Kasha’s Rule. Light Emission Didn’t Behave as Expected The researchers were examining the properties of molecular rotors suspended in a liquid. The molecules they were …
Cubic GaN-on-Si Makes More Efficient Green LEDs, According to Researchers
Researchers from the University of Illinois at Urbana Champaign have devised a new method for fabricating brighter and more efficient green LEDs. Using a standard semiconductor growth method, the researchers have grown gallium nitride (GaN) cubic crystals on a silicon substrate. The cubic GaN-on-Si crystals can produce powerful green light. …
Nanchang Kingsoon to Expand Capacity with Aixtron Systems
Aixtron reports that Nanchang Kingsoon, a recently founded Chinese manufacturer of optoelectronic devices, has ordered multiple of its MOCVD cluster tools to expand its manufacturing capacities for producing gallium arsenide-based red, orange and yellow (ROY) LEDs and solar cells. Aixtron says that it will deliver all of the systems in …
UCSB Researchers Identify Atomic Defects that Reduce LED Efficiency
Researchers at UCSB have identified a specific type of defect in the atomic structure of an LED that results in less efficient performance. The researchers anticipate that the characterization such point defects could lead to the fabrication of more efficient and longer lasting LEDs. Chris Van de Walle, whose research …
Plessey and Anvil Semiconductors Collaborate with 3C-SiC/Si Substrates to Overcome Green Gap
Plessey of Plymouth, England, Anvil Semiconductors and the University of Cambridge reported that they are collaborating on fabricating high-efficiency LEDs in cubic GaN grown on Anvil’s 3C-SiC / Si substrates. Plessey contends that cubic GaN has the potential to overcome the problems from the strong internal electric fields in LEDs, …
Boston University Awarded $13 Million in Patent Infringement Case Against Three Major Taiwan LED Companies
Boston University received a favorable jury verdict in its LED patent infringement case against Taiwan LED companies Everlight Electronics Co., Ltd., and Lite-On Technology Corporation, and Epistar Corporation. A US District Court jury awarded Boston University over $13 million after finding that three companies infringed on a BU patent for …
on December 7, 2015 in LED Chips, Phosphors, Optics, Drivers, LED Materials (GaN, GaAs, etc.) and Equipment
Plessey Semiconductor Awarded £1.3 million UK Government Grant for GaN-on-Si Development
Plessey Semiconductors has won £1.3 million grant for a UK government project that intends to expand its production of GaN-on-silicon LEDs at Plessey’s manufacturing site in Devon. Plessey will work with Aixtron and Brucker on the project. The grant is part of the £67 million UK government investment in the …
