| Bridgelux Closes Agreement and Expands Relationship with Toshiba to Drive GaN-on-Silicon Development|
May 20, 2013...Bridgelux Inc., of Livermore California USA, a developer and manufacturer of
LED lighting technologies, has closed an agreement with Toshiba Corporation.
The agreement was originally announced on April 22, 2013 (See: Coverage),
and the companies have now completed the transfer of Bridgelux GaN-on-Silicon
technology assets to Toshiba.
The agreement includes an expanded licensing and manufacturing supply
relationship. Bridgelux says it will continue to develop and market its
GaN-on-Sapphire LED products as a fabless solid state lighting company....QD Vision Announces Achievement of 18 Percent External Quantum Efficiency
May 16, 2013...QD Vision of Lexington, Massachusetts, a developer of quantum dot based LEDs,
reports having achieved 19 cd/A efficiency and 18 percent external quantum
efficiency. QD Vision’s latest QLED performance results are currently
published in the 21
April 2013 issue of Nature Photonics. In the article, QD Vision reports
achieving 18% External Quantum Efficiency (EQE) with a color saturated red
quantum dot-based LED.
The company claims that this puts QLEDs near the fundamental efficiency
limit of the technology which...Researchers Use Strain Engineering to Improve Green LED Light Output
May 8, 2013...Researchers from the Chinese Academy of Sciences’ Institute of
Semiconductors, Beijing, and University of Hong Kong have used strain
engineering to improve the light output of Green LEDs. The researchers improved
the light output of a 530nm green LED operating at 150 mA by 28.9 percent [Hongjian Li et al, Appl. Phys.
Express, vol6, p052102, 2013].
The researchers note that green-emitting nitride semiconductor LED
structures tend to suffer from low light output due to the difficulty...CrystAl-N Launches 2-Inch Bulk AlN
May 6, 2013...CrystAl-N, a German maker of AlN crystals is shifting its production from
1-inch to 2-inch AlN and accepting pre-orders of the new material. CrystAl-N is accepting pre-orders now. The company was founded in 2010 as a spin-off of Friedrich-Alexander-University Erlangen-Nuremberg. The company
says that its AlN substrates will boost the efficiency of deep UV LEDs, lasers
and high-power, high-frequency devices as soon as its cost-performance ratio is competitive. Furthermore CrystAl-N says that shifting...Hitachi Cable Develops Technology for Mass Production of GaN Templates
April 29, 2013...Hitachi Cable has developed a new mass-production technology for
GaN-templates. The process grows high-quality GaN single-crystal thin film on a
sapphire substrate. The company plans to start selling these templates. The
company says that using the templates as a base substrate for an epitaxial
wafer for white LEDs allows drastic improvement in productivity of white LED
epiwafers and the LED properties
MOPVE can reportedly grow a white LED epiwafer consisting of a thin active
layer and a...Epistar Signs LED Collaboration and IP Licensing Agreement With Intermolecular
April 23, 2013...Epistar, Corp. and Intermolecular, Inc. of San Jose, California USA, have
signed a collaborative development program (CDP) and royalty-bearing IP
licensing agreement to increase the efficiency and reduce cost of Epistar's LED
devices. Under this agreement, Epistar and Intermolecular engineers will
together leverage Intermolecular's High Productivity Combinatorial (HPC™)
technology platform for development and manufacturing qualification of novel
materials and processes for advanced LED products.
Intermolecular notes that in the highly competitive LED market, new
technologies created by R&D...Plessey Releases First GaN on Silicon LED Samples
April 9, 2013...Plessey announced that samples of its gallium nitride (GaN) on silicon LED products (p/n PLW111010) are now available. According to Plessey, these entry level products are the first LEDs manufactured on 6-inch GaN on silicon substrates to be commercially
available anywhere in the world.
Plessey reportedly uses its proprietary large diameter GaN on silicon process technology to manufacture the LEDs on its 6-inch MAGICTM (Manufactured on GaN I/C) line at its...Johnson Matthey Exits Gas Purification Market
April 4, 2013...Johnson Matthey reports that it is leaving the bulk gas purification market. The company, which makes many gas puification products suited to LED and compound semiconductor manufacturing, cited the slowdown in the LED fabrication market as the reason for its market exit. The company says specifically that it is getting out the business of selling systems for gas purification for bulk gases using palladium membrane, heated getter or regenerable...
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